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| inchange semiconductor product specification silicon pnp power transistors BD434/436/438 description ? ? with to-126 package ? complement to type bd433/435/437 applications ? for medium power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD434 -22 bd436 -32 v cbo collector-base voltage bd438 open emitter -45 v BD434 -22 bd436 -32 v ceo collector-emitter voltage bd438 open base -45 v v ebo emitter -base voltage open collector -5 v i c collector current (dc) -4 a i cm collector current-peak -7 a i b base current -1 a p c collector power dissipation t c =25 ?? 36 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors BD434/436/438 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD434/436 -0.5 v cesat collector-emitter saturation voltage bd438 i c =-2a; i b =-0.2a -0.2 -0.6 v BD434/436 -1.1 v be base-emitter on voltage bd438 i c =-2a ; v ce =-1v -1.2 v BD434 -22 bd436 -32 v ceo(sus) collector-emitter sustaining voltage bd438 i c =-0.1a; i b =0 -45 v BD434 v cb =-22v; i e =0 bd436 v cb =-32v; i e =0 i ces collector cut-off current bd438 v cb =-45v; i e =0 -100 | a BD434 v ce =-22v; v be =0 bd436 v ce =-32v; v be =0 i ces collector cut-off current bd438 v ce =-45v; v be =0 -100 | a i ebo emitter cut-off current v eb =-5v; i c =0 -1 ma BD434/436 40 h fe-1 dc current gain bd438 i c =-10ma ; v ce =-5v 30 130 h fe-2 dc current gain i c =-0.5a ; v ce =-1v 85 140 BD434/436 50 h fe-3 dc current gain bd438 i c =-2a ; v ce =-1v 40 f t transition frequency i c =-250ma; v ce =-1v 3 mhz inchange semiconductor product specification 3 silicon pnp power transistors BD434/436/438 package outline fig.2 outline dimensions |
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